Electrically Detected Magnetic Resonance (EDMR) of defects in GaN Light Emitting Diodes

Compared to standard Electron Spin Resonance (ESR), EDMR has proven to be a more sensitive method in detecting paramagnetic states in semiconductors. If certain transport processes like recombination or hopping are spin-dependent, they can be detected by EDMR via resonant changes in the conductivity of the sample under ESR conditions. The application of this technique to electronic devices is particularly interesting because performance limitations in electrical transport can be correlated with recombination processes due to defects. In addition, the microscopic structure of such defects can be determined from the resonance spectra observed.